View TLV2221IDBV_9057765.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june1996 revised january 1997 1 post office box 655303 ? dallas, texas 75265 output swing includes both supply rails low nois e...19 nv/ hz typ at f = 1 khz low input bias curren t...1 pa typ fully specified for single-supply 3-v and 5-v operation very low powe r...110 m a typ common-mode input voltage range includes negative rail wide supply voltage range 2.7 v to 10 v macromodel included description the tlv2221 is a single operational amplifier manufactured using the texas instruments advanced lincmos ? process. this device is optimized and fully specified for single-supply 3-v and 5-v operation. for this low-voltage operation combined with micropower dissipation levels, the input noise voltage performance has been dramatically improved using optimized design techniques for cmos-type amplifiers. another added benefit is that this amplifier exhibits rail-to-rail output swing. the output dynamic range can be extended using the tlv2221 with loads referenced midway between the rails. the common-mode input voltage range is wider than typical standard cmos-type amplifiers. to take advantage of this improvement in performance and to make this device available for a wider range of applications, v icr is specified with a larger maximum input offset voltage test limit of 5 mv, allowing a minimum of 0-v to 2-v common-mode input voltage range for a 3-v power supply. available options t a v io max at 25 c packaged devices symbol chip form t a v io max at 25 c sot-23 (dbv) 2 symbol form (y) 0 c to 70 c 3 mv tlv2221cdbv vadc tlv2221y 40 c to 85 c 3 mv TLV2221IDBV vadi tlv2221y 2 the dbv package available in tape and reel only. the advanced lincmos process uses a silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. this technology also makes possible input impedance levels that meet or exceed levels offered by top-gate jfet and expensive dielectric-isolated devices. the tlv2221, exhibiting high input impedance and low noise, is excellent for small-signal conditioning for high-impedance sources such as piezoelectric transducers. because of the low power dissipation levels combined with 3-v operation, this device works well in hand-held monitoring and remote-sensing applications. in addition, the rail-to-rail output feature with single or split power supplies makes this device an excellent choice when interfacing directly to analog-to-digital converters (adcs). all of these features combined with its temperature performance make the tlv2221 ideal for remote pressure sensors, temperature control, active voltage-resistive (vr) sensors, accelerometers, hand-held metering devices, and many other applications. please be aware that an important notice concerning availability, standard warranty, and use in critical applications of texas instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. dbv package (top view) 5 4 3 1 2 in v dd /gnd in + v dd+ out production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. copyright ? 1997, texas instruments incorporated advanced lincmos is a trademark of texas instruments incorporated.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june1996 revised january 1997 2 post office box 655303 ? dallas, texas 75265 description (continued) the device inputs and outputs are designed to withstand a 100-ma surge current without sustaining latch-up. in addition, internal esd-protection circuits prevent functional failures up to 2000 v as tested under mil-prf-38535; however, care should be exercised when handling these devices as exposure to esd may result in degradation of the device parametric performance. additional care should be exercised to prevent v dd + supply-line transients under powered conditions. transients of greater than 20 v can trigger the esd-protection structure, inducing a low-impedance path to v dd /gnd. should this condition occur, the sustained current supplied to the device must be limited to 100 ma or less. failure to do so could result in a latched condition and device failure.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june1996 revised january 1997 3 post office box 655303 ? dallas, texas 75265 tlv2221y chip information this chip, when properly assembled, displays characteristics similar to the tlv2221c. thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. this chip may be mounted with conductive epoxy or a gold-silicon preform. bonding pad assignments chip thickness: 10 mils typical bonding pads: 4 4 mils minimum t j max = 150 c tolerances are 10%. all dimensions are in mils. pin (2) is internally connected to backside of chip. + out in + in v dd + (5) (1) (3) (4) (2) v dd / gnd 40 (3) (2) (1) (5) (4) 32
tlv2221, tlv2221y very low-power single operational amplifiers slos157a june 1996 revised january 1997 t emp l ate r e l ease d ate: 7 11 94 advanced lincmos ? rail-to-rail 4 post office box 655303 dallas, texas 75265 ? equivalent schematic q3 q6 q9 q12 q14 q16 q2 q5 q7 q8 q10 q11 d1 q17 q15 q13 q4 q1 r5 c1 v dd + in + in r3 r7 r1 r2 out v dd / gnd component count 2 transistors diodes resistors capacitors 23 5 11 2 2 includes both amplifiers and all esd, bias, and trim circuitry r6 c2 r4
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 5 post office box 655303 ? dallas, texas 75265 absolute maximum ratings over operating free-air temperature range (unless otherwise noted) 2 supply voltage, v dd (see note 1) 12 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . differential input voltage, v id (see note 2) v dd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . input voltage range, v i (any input, see note 1) 0.3 v to v dd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . input current, i i (each input) 5 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . output current, i o 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total current into v dd + 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total current out of v dd 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . duration of short-circuit current (at or below) 25 c (see note 3) unlimited . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . continuous total power dissipation see dissipation rating table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating free-air temperature range, t a : tlv2221c 0 c to 70 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tlv2221i 40 c to 85 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg 65 c to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: dbv package 260 c . . . . . . . . . . . . . . . . . . 2 stresses beyond those listed under aabsolute maximum ratingso may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated under arecommended operating conditi onso is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. notes: 1. all voltage values, except differential voltages, are with respect to v dd . 2. differential voltages are at the noninverting input with respect to the inverting input. excessive current flows when input i s brought below v dd 0.3 v. 3. the output can be shorted to either supply. temperature and /or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded. dissipation rating table package t a 25 c derating factor t a = 70 c t a = 85 c package a power rating above t a = 25 c a power rating a power rating dbv 150 mw 1.2 mw/ c 96 mw 78 mw recommended operating conditions tlv2221c tlv2221i unit min max min max unit supply voltage, v dd 2.7 10 2.7 10 v input voltage range, v i v dd v dd + 1.3 v dd v dd + 1.3 v common-mode input voltage, v ic v dd v dd + 1.3 v dd v dd + 1.3 v operating free-air temperature, t a 0 70 40 85 c note 1: all voltage values, except differential voltages, are with respect to v dd .
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 6 post office box 655303 ? dallas, texas 75265 electrical characteristics at specified free-air temperature, v dd = 3 v (unless otherwise noted) parameter test conditions t a 2 tlv2221c tlv2221i unit parameter test conditions t a 2 min typ max min typ max unit v io input offset voltage v 1v v0 0.62 3 0.62 3 mv a vio temperature coefficient of in p ut v 1v v0 full range 1 1 m v/ c a vio coe ffi c i en t o f i npu t offset voltage v 1v v0 1 1 m v/ c input offset voltage long-term drift (see note 4) v dd = 1.5 v , v o = 0, v ic = 0, r s = 50 w 25 c 0.003 0.003 m v/mo i io in p ut offset current 25 c 0.5 0.5 p a i io inp u t offset c u rrent full range 150 150 pa i ib in p ut bias current 25 c 1 1 p a i ib inp u t bias c u rrent full range 150 150 pa 0 0.3 0 0.3 25 c 0 to 0.3 to 0 to 0.3 to v icr common-mode input r s =50 w | v io | 5mv 2 2.2 2 2.2 v v icr voltage range r s = 50 w , | v io | 5 mv 0 0 v full range 0 to 0 to g 1.7 1.7 hi h l l t t i oh = 100 m a 25 c 2.97 2.97 v oh high-level output voltage i oh = 400 m a 25 c 2.88 2.88 v voltage i oh = 400 m a full range 2.5 2.5 llltt v ic = 1.5 v, i ol = 50 m a 25 c 15 15 v ol low-level output voltage v ic =15v i ol = 500 m a 25 c 150 150 mv voltage v ic = 1 . 5 v , i ol = 500 m a full range 500 500 large - signal v15v r2k w 3 25 c 2 3 2 3 a vd large signal differential voltage v ic = 1.5 v, v o =1vto2v r l = 2 k w 3 full range 1 1 v/mv vd amplification v o = 1 v to 2 v r l = 1 m w 3 25 c 250 250 r id differential input resistance 25 c 10 12 10 12 w r ic common-mode input resistance 25 c 10 12 10 12 w c ic common-mode input capacitance f = 10 khz 25 c 6 6 pf z o closed-loop output impedance f = 10 khz, a v = 10 25 c 90 90 w cmrr common-mode v ic = 0 to 1.7 v, 25 c 70 82 70 82 db cmrr rejection ratio ic , v o = 1.5 v, r s = 50 w full range 65 65 db k svr supply voltage rejection ratio v dd = 2.7 v to 8 v, 25 c 80 95 80 95 db k svr re j ec ti on ra ti o ( d v dd / d v io ) dd , v ic = v dd /2, no load full range 80 80 db i dd su pp ly current v o =15v no load 25 c 100 150 100 150 m a i dd s u ppl y c u rrent v o = 1 . 5 v , no load full range 200 200 m a 2 full range for the tlv2221c is 0 c to 70 c. full range for the tlv2221i is 40 c to 85 c. 3 referenced to 1.5 v note 4: typical values are based on the input offset voltage shift observed through 500 hours of operating life test at t a = 150 c extrapolated to t a = 25 c using the arrhenius equation and assuming an activation energy of 0.96 ev.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 7 post office box 655303 ? dallas, texas 75265 operating characteristics at specified free-air temperature, v dd = 3 v parameter test conditions t a 2 tlv2221c tlv2221i unit parameter test conditions t a 2 min typ max min typ max unit slew rate at unity v o =11vto19v r2k w 3 25 c 0.1 0.18 0.1 0.18 sr sle w rate at u nit y gain v o = 1 . 1 v to 1 . 9 v , c l = 100 pf 3 r l = 2 k w 3 , full range 0.05 0.05 v/ m s v equivalent input f = 10 hz 25 c 120 120 nv/ hz v n q noise voltage f = 1 khz 25 c 20 20 n v/ h z v n(pp) peak-to-peak equivalent in p ut f = 0.1 hz to 1 hz 25 c 680 680 mv v n(pp) equ i va l en t i npu t noise voltage f = 0.1 hz to 10 hz 25 c 860 860 mv i n equivalent input noise current 25 c 0.6 0.6 fa / hz v o = 1 v to 2 v, f 20 khz a v = 1 25 c 2.52% 2.52% thd+n total harmonic f = 20 kh z, r l = 2 k w 3 a v = 10 25 c 7.01% 7.01% thd + n distortion plus noise v o = 1 v to 2 v, f 20 khz a v = 1 25 c 0.076% 0.076% f = 20 kh z, r l = 2 k w a v = 10 25 c 0.147% 0.147% gain-bandwidth product f = 1 khz, c l = 100 pf 3 r l = 2 k w 3 , 25 c 480 480 khz b om maximum output-swing bandwidth v o(pp) = 1 v, r l = 2 k w 3 , a v = 1, c l = 100 pf 3 25 c 30 30 khz t settling time a v = 1, step = 1 v to 2 v, to 0.1% 25 c 4.5 4.5 m s t s settling time , r l = 2 k w 3 , c l = 100 pf 3 to 0.01% 25 c 6.8 6.8 m s f m phase margin at unity gain r l = 2 k w 3 , c l = 100 pf 3 25 c 51 51 gain margin l , l 25 c 12 12 db 2 full range is 40 c to 85 c. 3 referenced to 1.5 v referenced to 0 v
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 8 post office box 655303 ? dallas, texas 75265 electrical characteristics at specified free-air temperature, v dd = 5 v (unless otherwise noted) parameter test conditions t a 2 tlv2221c tlv2221i unit parameter test conditions t a 2 min typ max min typ max unit v io input offset voltage v 2v v0 0.61 3 0.61 3 mv a vio temperature coefficient of in p ut v 2v v0 full range 1 1 m v/ c a vio coe ffi c i en t o f i npu t offset voltage v 2v v0 1 1 m v/ c input offset voltage long-term drift (see note 4) v dd = 2.5 v , v o = 0, v ic = 0, r s = 50 w 25 c 0.003 0.003 m v/mo i io in p ut offset current 25 c 0.5 0.5 p a i io inp u t offset c u rrent full range 150 150 pa i ib in p ut bias current 25 c 1 1 p a i ib inp u t bias c u rrent full range 150 150 pa v icr common-mode input r s =50 w | v io | 5mv 25 c 0 to 4 0.3 to 4.2 0 to 4 0.3 to 4.2 v v icr voltage range r s = 50 w , | v io | 5 mv full range 0 to 3.5 0 to 3.5 v v oh high-level output i oh = 500 m a 25 c 4.75 4.88 4.75 4.88 v v oh g voltage i oh = 1 ma 25 c 4.5 4.76 4.5 4.76 v llltt v ic = 2.5 v, i ol = 50 m a 25 c 12 12 v ol low-level output voltage v ic =25v i ol = 500 m a 25 c 120 120 mv voltage v ic = 2 . 5 v , i ol = 500 m a full range 500 500 large - signal v25v r2k w 3 25 c 3 5 3 5 a vd large signal differential voltage v ic = 2.5 v, v o =1vto4v r l = 2 k w 3 full range 1 1 v/mv vd amplification v o = 1 v to 4 v r l = 1 m w 3 25 c 800 800 r id differential input resistance 25 c 10 12 10 12 w r ic common-mode input resistance 25 c 10 12 10 12 w c ic common-mode input capacitance f = 10 khz 25 c 6 6 pf z o closed-loop output impedance f = 10 khz, a v = 10 25 c 70 70 w cmrr common-mode v ic = 0 to 2.7 v, v o = 1.5 v , 25 c 70 85 70 85 db cmrr rejection ratio ic , r s = 50 w o , full range 65 65 db k svr supply voltage rejection ratio v dd = 4.4 v to 8 v, 25 c 80 95 80 95 db k svr re j ec ti on ra ti o ( d v dd / d v io ) dd , v ic = v dd /2, no load full range 80 80 db i dd su pp ly current v o =25v no load 25 c 110 150 110 150 m a i dd s u ppl y c u rrent v o = 2 . 5 v , no load full range 200 200 m a 2 full range for the tlv2221c is 0 c to 70 c. full range for the tlv2221i is 40 c to 85 c. 3 referenced to 2.5 v note 5: typical values are based on the input offset voltage shift observed through 500 hours of operating life test at t a = 150 c extrapolated to t a = 25 c using the arrhenius equation and assuming an activation energy of 0.96 ev.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 9 post office box 655303 ? dallas, texas 75265 operating characteristics at specified free-air temperature, v dd = 5 v parameter test conditions t a 2 tlv2221c tlv2221i unit parameter test conditions t a 2 min typ max min typ max unit slew rate at unity v o =15vto35v r2k w 3 25 c 0.1 0.18 0.1 0.18 sr sle w rate at u nit y gain v o = 1 . 5 v to 3 . 5 v , c l = 100 pf 3 r l = 2 k w 3 , full range 0.05 0.05 v/ m s v equivalent input f = 10 hz 25 c 90 90 nv/ hz v n q noise voltage f = 1 khz 25 c 19 19 n v/ h z v n(pp) peak-to-peak equivalent in p ut f = 0.1 hz to 1 hz 25 c 800 800 mv v n(pp) equ i va l en t i npu t noise voltage f = 0.1 hz to 10 hz 25 c 960 960 mv i n equivalent input noise current 25 c 0.6 0.6 fa / hz v o = 1.5 v to 3.5 v, f 20 khz a v = 1 25 c 2.45% 2.45% thd+n total harmonic f = 20 kh z, r l = 2 k w 3 a v = 10 25 c 5.54% 5.54% thd + n distortion plus noise v o = 1.5 v to 3.5 v, f 20 khz a v = 1 25 c 0.142% 0.142% f = 20 kh z, r l = 2 k w a v = 10 25 c 0.257% 0.257% gain-bandwidth product f = 1 khz, c l = 100 pf 3 r l = 2 k w 3 , 25 c 510 510 khz b om maximum output- swing bandwidth v o(pp) = 1 v, r l = 2 k w 3 , a v = 1, c l = 100 pf 3 25 c 40 40 khz t settling time a v = 1, step = 1.5 v to 3.5 v, to 0.1% 25 c 6.8 6.8 m s t s settling time , r l = 2 k w 3 , c l = 100 pf 3 to 0.01% 25 c 9.2 9.2 m s f m phase margin at unity gain r l = 2 k w 3 , c l = 100 pf 3 25 c 52 52 gain margin l , l 25 c 12 12 db 2 full range is 40 c to 85 c. 3 referenced to 2.5 v referenced to 0 v
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 10 post office box 655303 ? dallas, texas 75265 electrical characteristics at v dd = 3 v, t a = 25 c (unless otherwise noted) parameter test conditions tlv2221y unit parameter test conditions min typ max unit v io input offset voltage v 15v v0 v0 620 m v i io input offset current v dd = 1.5 v, r s =50 w v ic = 0, v o = 0, 0.5 pa i ib input bias current r s = 50 w 1 pa 0.3 v icr common-mode input voltage range | v io | 5 mv, r s = 50 w to v icr gg io s 2.2 v oh high-level output voltage i oh = 100 m a 2.97 v v ol low level out p ut voltage v ic = 1.5 v, i ol = 50 m a 15 mv v ol lo w- le v el o u tp u t v oltage v ic = 1.5 v, i ol = 500 m a 150 mv a vd large-signal differential v o =1vto2v r l = 2 k w 2 3 v/mv a vd gg voltage amplification v o = 1 v to 2 v r l = 1 m w 2 250 v/mv r id differential input resistance 10 12 w r ic common-mode input resistance 10 12 w c ic common-mode input capacitance f = 10 khz 6 pf z o closed-loop output impedance f = 10 khz, a v = 10 90 w cmrr common-mode rejection ratio v ic = 0 to 1.7 v, v o = 0, r s = 50 w 82 db k svr supply voltage rejection ratio ( d v dd / d v io ) v dd = 2.7 v to 8 v, v ic = 0, no load 95 db i dd supply current v o = 0, no load 100 m a 2 referenced to 1.5 v electrical characteristics at v dd = 5 v, t a = 25 c (unless otherwise noted) parameter test conditions tlv2221y unit parameter test conditions min typ max unit v io input offset voltage v 15v v0 v0 610 m v i io input offset current v dd = 1.5 v, r s =50 w v ic = 0, v o = 0, 0.5 pa i ib input bias current r s = 50 w 1 pa 0.3 v icr common-mode input voltage range | v io | 5 mv, r s = 50 w to v icr gg io s 4.2 v oh high-level output voltage i oh = 500 m a 4.88 v v ol low level out p ut voltage v ic = 2.5 v, i ol = 50 m a 12 mv v ol lo w- le v el o u tp u t v oltage v ic = 2.5 v, i ol = 500 m a 120 mv a vd large-signal differential v o =1vto4v r l = 2 k w 2 5 v/mv a vd gg voltage amplification v o = 1 v to 4 v r l = 1 m w 2 800 v/mv r id differential input resistance 10 12 w r ic common-mode input resistance 10 12 w c ic common-mode input capacitance f = 10 khz 6 pf z o closed-loop output impedance f = 10 khz, a v = 10 70 w cmrr common-mode rejection ratio v ic = 0 to 1.7 v, v o = 0, r s = 50 w 85 db k svr supply voltage rejection ratio ( d v dd / d v io ) v dd = 2.7 v to 8 v, v ic = 0, no load 95 db i dd supply current v o = 0, no load 110 m a 2 referenced to 2.5 v
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 11 post office box 655303 ? dallas, texas 75265 typical characteristics table of graphs figure v io in p ut offset voltage distribution 1, 2 v io inp u t offset v oltage vs common-mode input voltage , 3, 4 a vio input offset voltage temperature coefficient distribution 5, 6 i ib /i io input bias and input offset currents vs free-air temperature 7 v i in p ut voltage vs supply voltage 8 v i inp u t v oltage yg vs free-air temperature 9 v oh high-level output voltage vs high-level output current 10, 13 v ol low-level output voltage vs low-level output current 11, 12, 14 v o(pp) maximum peak-to-peak output voltage vs frequency 15 i os short circuit out p ut current vs supply voltage 16 i os short - circ u it o u tp u t c u rrent yg vs free-air temperature 17 v o output voltage vs differential input voltage 18, 19 a vd differential voltage amplification vs load resistance 20 a vd large signal differential voltage am p lification vs frequency 21, 22 a vd large signal differential v oltage amplification qy vs free-air temperature , 23, 24 z o output impedance vs frequency 25, 26 cmrr common mode rejection ratio vs frequency 27 cmrr common - mode rejection ratio qy vs free-air temperature 28 k svr su pp ly voltage rejection ratio vs frequency 29, 30 k svr s u ppl y-v oltage rejection ratio qy vs free-air temperature , 31 i dd supply current vs supply voltage 32 sr slew rate vs load capacitance 33 sr sle w rate vs free-air temperature 34 v o inverting large-signal pulse response vs time 35, 36 v o voltage-follower large-signal pulse response vs time 37, 38 v o inverting small-signal pulse response vs time 39, 40 v o voltage-follower small-signal pulse response vs time 41, 42 v n equivalent input noise voltage vs frequency 43, 44 input noise voltage (referred to input) over a 10-second period 45 thd + n total harmonic distortion plus noise vs frequency 46 gain bandwidth p roduct vs free-air temperature 47 gain - band w idth prod u ct vs supply voltage 48 f phase margin vs frequency 21, 22 f m phase margin qy vs load capacitance , 51, 52 gain margin vs load capacitance 49, 50 b 1 unity-gain bandwidth vs load capacitance 53, 54
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 12 post office box 655303 ? dallas, texas 75265 typical characteristics figure 1 precentage of amplifiers % distribution of tlv2211 input offset voltage v io input offset voltage mv 15 10 5 0 20 25 1.5 1 0.5 0 0.5 1 1.5 385 amplifiers from 1 wafer lot v dd = 1.5 v t a = 25 c figure 2 precentage of amplifiers % distribution of tlv2211 input offset voltage v io input offset voltage mv 15 10 5 0 20 25 1.5 1 0.5 0 0.5 1 1.5 v dd = 2.5 v t a = 25 c 385 amplifiers from 1 wafer lot figure 3 input offset voltage mv input offset voltage 2 vs common-mode input voltage v io v ic common-mode input voltage v 1 0.8 0.6 0.4 0.2 0 0.2 0.4 0.6 0.8 1 1 0 1 2 v dd = 3 v r s = 50 w t a = 25 c 3 figure 4 input offset voltage mv input offset voltage 2 vs common-mode input voltage v io v ic common-mode input voltage v 1 0.8 0.6 0.4 0.2 0 0.2 0.4 0.6 0.8 1 1 0 1 2 v dd = 5 v r s = 50 w t a = 25 c 3 45 2 for all curves where v dd = 5 v, all loads are referenced to 2.5 v. for all curves where v dd = 3 v, all loads are referenced to 1.5 v.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 13 post office box 655303 ? dallas, texas 75265 typical characteristics figure 5 distribution of tlv2221 input offset voltage temperature coefficient 2 percentage of amplifiers % a vio input offset voltage temperature coefficient m v/ c 15 10 5 0 20 25 4 3 2 0 1 2 3 v dd = 1.5 v p package t a = 25 c to 125 c 1 4 32 amplifiers from 1 wafer lot figure 6 distribution of tlv2221 input offset voltage temperature coefficient 2 percentage of amplifiers % a vio input offset voltage temperature coefficient m v/ c 15 10 5 0 20 25 4 3 2 0 1 2 3 v dd = 2.5 v p package t a = 25 c to 125 c 1 4 32 amplifiers from 1 wafer lot figure 7 iib and iio input bias and input offset currents pa input bias and input offset currents vs free-air temperature i ib i io t a free-air temperature c 50 40 20 10 0 90 30 25 45 65 85 70 60 80 100 105 125 v dd = 2.5 v v ic = 0 v o = 0 r s = 50 w i ib i io figure 8 0 4 1 1.5 2 2.5 input voltage v 2 1 3 input voltage vs supply voltage 5 3 3.5 4 1 2 3 4 5 r s = 50 w t a = 25 c |v io | 5 mv v i |v dd | supply voltage v 2 data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various dev ices.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 14 post office box 655303 ? dallas, texas 75265 typical characteristics figure 9 input voltage v input voltage 23 vs free-air temperature v i t a free-air temperature c 2 1 0 3 4 5 1 55 35 15 5 25 45 65 85 |v io | 5 mv v dd = 5 v 105 125 figure 10 high-level output voltage v high-level output voltage 23 vs high-level output current v oh |i oh | high-level output current ma 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 2 2.5 3 3.5 4 4.5 5 v dd = 3 v t a = 40 c t a = 25 c t a = 85 c t a = 125 c figure 11 0.6 0.4 0.2 0 0123 low-level output voltage v 0.8 1 low-level output voltage 3 vs low-level output current 1.2 45 v ol i ol low-level output current ma v dd = 3 v t a = 25 c v ic = 0 v ic = 0.75 v v ic = 1.5 v figure 12 low-level output voltage v low-level output voltage 23 vs low-level output current v ol i ol low-level output current ma 0.4 0.2 1.2 0 012 3 0.8 0.6 1 1.4 45 t a = 85 c t a = 40 c t a = 25 c t a = 125 c v dd = 3 v v ic = 1.5 v 2 data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various dev ices. 3 for all curves where v dd = 5 v, all loads are referenced to 2.5 v. for all curves where v dd = 3 v, all loads are referenced to 1.5 v.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 15 post office box 655303 ? dallas, texas 75265 typical characteristics figure 13 high-level output voltage v high-level output voltage 23 vs high-level output current v oh |i oh | high-level output current ma 2 1 0 01 23 4 3 4 5 5678 v dd = 5 v v ic = 2.5 v t a = 40 c t a = 25 c t a = 85 c t a = 125 c figure 14 low-level output voltage v low-level output voltage 23 vs low-level output current v ol i ol low-level output current ma 0.6 0.4 0.2 0 01 2 3 1 1.2 1.4 456 0.8 v dd = 5 v v ic = 2.5 v t a = 40 c t a = 85 c t a = 25 c t a = 125 c figure 15 maximum peak-to-peak output voltage v f frequency hz maximum peak-to-peak output voltage 3 vs frequency v o(pp) 4 2 1 5 3 0 10 2 10 3 10 4 10 5 r l = 2 k w t a = 25 c v dd = 5 v v dd = 3 v figure 16 short-circuit output current ma short-circuit output current vs supply voltage i os v dd supply voltage v 2 8 4 0 4 8 12 16 20 345678 v o = v dd /2 t a = 25 c v ic = v dd /2 v id = 100 mv v id = 100 mv 2 data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various dev ices. 3 for all curves where v dd = 5 v, all loads are referenced to 2.5 v. for all curves where v dd = 3 v, all loads are referenced to 1.5 v.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 16 post office box 655303 ? dallas, texas 75265 typical characteristics figure 17 short-circuit output current ma short-circuit output current 23 vs free-air temperature i os t a free-air temperature c 20 16 12 8 4 0 4 8 75 50 25 0 25 50 75 100 125 v dd = 5 v v ic = 2.5 v v o = 2.5 v v id = 100 mv v id = 100 mv figure 18 5 4 3 2 1 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 v dd = 3 v r i = 2 k w v ic = 1.5 v t a = 25 c output voltage 3 vs differential input voltage v id differential input voltage v output voltage v v o figure 19 5 4 3 2 1 0 1 2 3 4 5 0 1 2 3 4 5 v dd = 5 v v ic = 2.5 v r l = 2 k w t a = 25 c output voltage 3 vs differential input voltage v id differential input voltage v output voltage v v o figure 20 differential voltage amplification 3 vs load resistance r l load resistance k w differential voltage amplification v/mv a vd 110 1 10 2 10 3 10 2 10 1 1 10 3 v dd = 5 v v dd = 3 v v o(pp) = 2 v t a = 25 c 2 data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various dev ices. 3 for all curves where v dd = 5 v, all loads are referenced to 2.5 v. for all curves where v dd = 3 v, all loads are referenced to 1.5 v.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 17 post office box 655303 ? dallas, texas 75265 typical characteristics om phase margin f m f frequency hz large-signal differential voltage 2 amplification and phase margin vs frequency avd large-signal differential a vd voltage amplification db 10 4 gain phase margin 20 80 60 40 0 20 40 180 135 90 45 0 45 90 10 5 10 6 10 7 v dd = 5 v r l = 2 k w c l = 100 pf t a = 25 c figure 21 om phase margin f m f frequency hz large-signal differential voltage amplification and phase margin 2 vs frequency avd large-signal differential a vd voltage amplification db gain phase margin v dd = 3 v r l = 2 k w c l = 100 pf t a = 25 c 10 4 20 80 60 40 0 20 40 180 135 90 45 0 45 90 10 5 10 6 10 7 figure 22 2 for all curves where v dd = 5 v, all loads are referenced to 2.5 v. for all curves where v dd = 3 v, all loads are referenced to 1.5 v.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 18 post office box 655303 ? dallas, texas 75265 typical characteristics figure 23 large-signal differential voltage amplification 23 vs free-air temperature t a free-air temperature c large-signal differential voltage a vd amplification v/mv 50 25 0 25 50 75 100 r l = 2 k w r l = 1 m w 10 3 10 2 1 v dd = 3 v v ic = 1.5 v v o = 0.5 v to 2.5 v 75 125 10 1 figure 24 large-signal differential voltage amplification 23 vs free-air temperature t a free-air temperature c large-signal differential voltage a vd amplification v/mv v dd = 5 v v ic = 2.5 v v o = 1 v to 4 v r l = 2 k w r l = 1 m w 50 25 0 25 50 75 100 125 10 4 10 3 10 2 1 75 10 1 figure 25 output impedance f frequency hz output impedance 3 vs frequency w z o 1 10 1 10 3 10 4 10 5 10 2 v dd = 3 v t a = 25 c a v = 100 a v = 10 a v = 1 10 100 1000 figure 26 output impedance f frequency hz output impedance 3 vs frequency w z o v dd = 5 v t a = 25 c a v = 100 a v = 10 a v = 1 10 1 0.1 1000 100 10 1 10 3 10 4 10 5 10 2 2 data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various dev ices. 3 for all curves where v dd = 5 v, all loads are referenced to 2.5 v. for all curves where v dd = 3 v, all loads are referenced to 1.5 v.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 19 post office box 655303 ? dallas, texas 75265 typical characteristics figure 27 cmrr common-mode rejection ratio db f frequency hz common-mode rejection ratio 2 vs frequency 80 40 20 0 100 60 10 1 10 2 10 3 10 4 10 5 10 6 v dd = 5 v v ic = 2.5 v t a = 25 c v dd = 3 v v ic = 1.5 v figure 28 cmmr common-mode rejection ratio db common-mode rejection ratio 23 vs free-air temperature t a free-air temperature c 88 86 84 82 80 78 75 50 25 0 25 50 75 100 125 v dd = 5 v v dd = 3 v figure 29 supply-voltage rejection ratio db f frequency hz supply-voltage rejection ratio 2 vs frequency k svr 60 40 20 100 80 0 20 10 1 10 2 10 3 10 4 10 5 10 6 k svr + k svr v dd = 3 v t a = 25 c figure 30 supply-voltage rejection ratio db f frequency hz supply-voltage rejection ratio 2 vs frequency k svr v dd = 5 v t a = 25 c k svr k svr + 100 80 60 40 20 0 20 10 1 10 2 10 3 10 4 10 5 10 6 3 data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various dev ices. 2 for all curves where v dd = 5 v, all loads are referenced to 2.5 v. for all curves where v dd = 3 v, all loads are referenced to 1.5 v.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 20 post office box 655303 ? dallas, texas 75265 typical characteristics figure 31 supply-voltage rejection ratio db supply-voltage rejection ratio 2 vs free-air temperature k svr t a free-air temperature c 50 25 0 25 50 75 100 125 75 v dd = 2.7 v to 8 v v ic = v o = v dd /2 100 98 96 94 92 90 figure 32 supply current a m i dd v dd supply voltage v supply current 2 vs supply voltage t a = 25 c t a = 85 c t a = 40 c v o = 0 no load 200 175 150 125 100 75 50 25 0 0246810 figure 33 sr slew rate slew rate 3 vs load capacitance c l load capacitance pf s m v/ 0.5 10 1 0.4 0.3 0.2 0.1 0 10 2 10 3 10 4 10 5 v dd = 5 v a v = 1 t a = 25 c sr sr + figure 34 sr slew rate slew rate 23 vs free-air temperature s m v/ t a free-air temperature c 0.2 0.1 0 0.3 0.4 0.5 50 25 0 25 50 75 100 v dd = 5 v r l = 2 k w c l = 100 pf a v = 1 75 125 sr sr + 2 data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various dev ices. 3 for all curves where v dd = 5 v, all loads are referenced to 2.5 v. for all curves where v dd = 3 v, all loads are referenced to 1.5 v.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 21 post office box 655303 ? dallas, texas 75265 typical characteristics figure 35 output voltage v inverting large-signal pulse response 2 v o t time m s a v = 1 t a = 25 c v dd = 3 v r l = 2 k w c l = 100 pf 1.5 1 0.5 0 2 2.5 3 0 5 10 15 20 25 30 35 40 45 50 figure 36 inverting large-signal pulse response 2 t time m s output voltage v v o 2 1 0 0 5 10 15 20 25 30 3 4 5 35 40 45 50 v dd = 5 v r l = 2 k w c l = 100 pf a v = 1 t a = 25 c figure 37 voltage-follower large-signal pulse response 2 output voltage v v o t time m s 1 0 0 5 10 15 20 25 30 2 3 35 40 45 50 a v = 1 t a = 25 c v dd = 5 v r l = 2 k w c l = 100 pf 4 5 figure 38 voltage-follower large-signal pulse response 2 output voltage v v o t time m s 2 1 0 0 5 10 15 20 25 30 3 4 5 35 40 45 50 v dd = 5 v c l = 100 pf a v = 1 t a = 25 c r l = 100 k w tied to 2.5 v r l = 2 k w tied to 2.5 v r l = 2 k w tied to 0 v 2 for all curves where v dd = 5 v, all loads are referenced to 2.5 v. for all curves where v dd = 3 v, all loads are referenced to 1.5 v.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 22 post office box 655303 ? dallas, texas 75265 typical characteristics figure 39 inverting small-signal pulse response 2 output voltage v v o t time m s 0.82 0 0.8 0.78 0.76 0.74 0.72 0.7 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v dd = 3 v r l = 2 k w c l = 100 pf a v = 1 t a = 25 c figure 40 vo output voltage v inverting small-signal pulse response 2 v o t time m s v dd = 5 v r l = 2 k w c l = 100 pf a v = 1 t a = 25 c 2.58 0 2.56 2.54 2.52 2.5 2.48 2.46 2.44 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 figure 41 voltage-follower small-signal pulse response 2 vo output voltage v v o t time m s 0.82 0 0.8 0.78 0.76 0.74 0.72 0.7 12 345678910 v dd = 3 v r l = 2 k w c l = 100 pf a v = 1 t a = 25 c figure 42 voltage-follower small-signal pulse response 2 vo output voltage v v o t time m s 2.58 0 2.56 2.54 2.52 2.5 2.48 2.46 2.44 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v dd = 5 v r l = 2 k w c l = 100 pf a v = 1 t a = 25 c 2 for all curves where v dd = 5 v, all loads are referenced to 2.5 v. for all curves where v dd = 3 v, all loads are referenced to 1.5 v.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 23 post office box 655303 ? dallas, texas 75265 typical characteristics figure 43 equivalent input noise voltage f frequency hz equivalent input noise voltage 2 vs frequency v n nv/ hz 10 1 10 2 10 3 10 4 120 v dd = 3 v r s = 20 w t a = 25 c 100 80 60 40 20 0 figure 44 equivalent input noise voltage f frequency hz equivalent input noise voltage 2 vs frequency v n nv/ hz v dd = 5 v r s = 20 w t a = 25 c 10 1 10 2 10 3 10 4 120 100 80 60 40 20 0 figure 45 input noise voltage nv t time s input noise voltage over a 10-second period 2 0246 750 1000 810 500 250 500 750 1000 250 v dd = 5 v f = 0.1 hz to 10 hz t a = 25 c 0 figure 46 thd + n total harmonic distortion plus noise % f frequency hz total harmonic distortion plus noise 2 vs frequency 10 1 10 2 10 3 10 4 10 5 0.1 10 0.01 1 a v = 1 a v = 10 a v = 1 a v = 10 v dd = 5 v t a = 25 c r l = 2 k w tied to 2.5 v r l = 2 k w tied to 0 v 2 for all curves where v dd = 5 v, all loads are referenced to 2.5 v. for all curves where v dd = 3 v, all loads are referenced to 1.5 v.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 24 post office box 655303 ? dallas, texas 75265 typical characteristics figure 47 gain-bandwidth product khz gain-bandwidth product 23 vs free-air temperature t a free-air temperature c 500 400 300 200 600 700 800 50 25 0 25 50 100 75 v dd = 5 v f = 10 khz r l = 2 khz c l = 100 pf 125 75 figure 48 gain-bandwidth product khz gain-bandwidth product vs supply voltage v dd supply voltage v 500 450 425 400 550 575 600 525 475 023 5 78 146 r l = 2k c l = 100 pf t a = 25 c figure 49 gain margin db gain margin vs load capacitance c l load capacitance pf r null = 500 w r null = 200 w r null = 0 20 10 5 0 15 10 1 10 2 10 3 10 5 10 4 r null = 1 k w t a = 25 c r l = figure 50 c l load capacitance pf 10 1 10 2 10 3 10 5 10 4 r null = 1 k w r null = 500 w r null = 100 w r null = 0 t a = 25 c r l = 2 k w 20 15 10 5 0 gain margin db gain margin vs load capacitance 2 data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various dev ices. 3 for all curves where v dd = 5 v, all loads are referenced to 2.5 v. for all curves where v dd = 3 v, all loads are referenced to 1.5 v.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 25 post office box 655303 ? dallas, texas 75265 typical characteristics figure 51 om phase margin phase margin vs load capacitance c l load capacitance pf m f 10 1 10 2 10 3 10 5 75 60 45 30 15 0 r null = 200 w r null = 500 w r null = 0 r null = 1 k w 10 4 t a = 25 c r l = figure 52 c l load capacitance pf 10 1 10 2 10 3 10 5 75 60 45 30 15 0 10 4 r null = 1 k w r null = 500 w r null = 100 w r null = 0 t a = 25 c r l = 2 k w om phase margin phase margin vs load capacitance m f figure 53 unity-gain bandwidth khz unity-gain bandwidth vs load capacitance c l load capacitance pf b 1 600 10 1 10 2 10 3 10 4 10 5 500 400 300 200 100 0 t a = 25 c r l = figure 54 c l load capacitance pf 10 1 10 2 10 3 10 5 10 4 t a = 25 c r l = 2 k w 600 500 400 300 200 100 0 unity-gain bandwidth khz unity-gain bandwidth vs load capacitance b 1
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 26 post office box 655303 ? dallas, texas 75265 application information driving large capacitive loads the tlv2221 is designed to drive larger capacitive loads than most cmos operational amplifiers. figure 49 through figure 54 illustrate its ability to drive loads greater than 100 pf while maintaining good gain and phase margins (r null = 0). a small series resistor (r null ) at the output of the device (figure 55) improves the gain and phase margins when driving large capacitive loads. figure 49 through figure 52 show the effects of adding series resistances of 100 w , 200 w , 500 w , and 1 k w . the addition of this series resistor has two effects: the first effect is that it adds a zero to the transfer function and the second effect is that it reduces the frequency of the pole associated with the output load in the transfer function. the zero introduced to the transfer function is equal to the series resistance times the load capacitance. to calculate the approximate improvement in phase margin, equation (1) can be used. df m1 tan 1 2 p ugb w r null c l df m1 improvement in phase margin ugbw unity-gain bandwidth frequency r null output series resistance c l load capacitance (1) where : the unity-gain bandwidth (ugbw) frequency decreases as the capacitive load increases (figure 53 and figure 54). to use equation (1), ugbw must be approximated from figure 53 and figure 54. v dd / gnd v dd + r null c l v i + r l figure 55. series-resistance circuit the tlv2221 is designed to provide better sinking and sourcing output currents than earlier cmos rail-to-rail output devices. this device is specified to sink 500 m a and source 1 ma at v dd = 5 v at a maximum quiescent i dd of 200 m a. this provides a greater than 80% power efficiency. when driving heavy dc loads, such as 2 k w , the positive edge under slewing conditions can experience some distortion. this condition can be seen in figure 37. this condition is affected by three factors: where the load is referenced. when the load is referenced to either rail, this condition does not occur. the distortion occurs only when the output signal swings through the point where the load is referenced. figure 38 illustrates two 2-k w load conditions. the first load condition shows the distortion seen for a 2-k w load tied to 2.5 v. the third load condition in figure 38 shows no distortion for a 2-k w load tied to 0 v. load resistance. as the load resistance increases, the distortion seen on the output decreases. figure 38 illustrates the difference seen on the output for a 2-k w load and a 100-k w load with both tied to 2.5 v. input signal edge rate. faster input edge rates for a step input result in more distortion than with slower input edge rates.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 27 post office box 655303 ? dallas, texas 75265 application information macromodel information macromodel information provided was derived using microsim parts ? , the model generation software used with microsim pspice ? . the boyle macromodel (see note 6) and subcircuit in figure 56 are generated using the tlv2221 typical electrical and operating characteristics at t a = 25 c. using this information, output simulations of the following key parameters can be generated to a tolerance of 20% (in most cases): maximum positive output voltage swing maximum negative output voltage swing slew rate quiescent power dissipation input bias current open-loop voltage amplification unity-gain frequency common-mode rejection ratio phase margin dc output resistance ac output resistance short-circuit output current limit note 6: g. r. boyle, b. m. cohn, d. o. pederson, and j. e. solomon, amacromodeling of integrated circuit operational amplifierso , ieee journal of solid-state circuits, sc-9, 353 (1974). out + + + + + + + + + .subckt tlv2221 1 2 3 4 5 c1 11 12 12.53e12 c2 6 7 50.00e12 dc 5 53 dx de 54 5 dx dlp 90 91 dx dln 92 90 dx dp 43dx egnd 99 0 poly (2) (3,0) (4,0) 0 .5 .5 fb 7 99 poly (5) vb vc ve vlp + vln 0 893.6e3 90e3 90e3 90e3 90e3 ga 6 0 11 12 94.25e6 gcm 0 6 10 99 9.300e9 iss 3 10 dc 9.000e6 hlim 90 0 vlim 1k j1 11 2 10 jx j2 12 1 10 jx r2 6 9 100.0e3 rd1 60 11 10.61e3 rd2 60 12 10.61e3 r01 8 5 35 r02 7 99 35 rp 3 4 49.50e3 rss 10 99 22.22e6 vad 60 4 .5 vb 9 0 dc 0 vc 3 53 dc .666 ve 54 4 dc .666 vlim 7 8 dc 0 vlp 91 0 dc 3.4 vln 0 92 dc 11.4 .model dx d (is=800.0e18) .model jx pjf (is=500.0e15 beta=1.527e3 + vto=.001) .ends v dd + rp in 2 in + 1 v dd vad rd1 11 j1 j2 10 rss iss 3 12 rd2 60 ve 54 de dp vc dc 4 c1 53 r2 6 9 egnd vb fb c2 gcm ga vlim 8 5 ro1 ro2 hlim 90 dlp 91 dln 92 vln vlp 99 7 figure 56. boyle macromodel and subcircuit pspice and parts are trademark of microsim corporation.
tlv2221, tlv2221y advanced lincmos ? rail-to-rail very low-power single operational amplifiers slos157a june 1996 revised january 1997 28 post office box 655303 ? dallas, texas 75265 mechanical information dbv (r-pdso-g5) plastic small-outline package 0,25 gage plane 0,15 nom 4073253-3/a 09/95 3,00 0,20 0,40 1,80 1,50 2,50 4 5 3 3,10 1 2,70 1,00 1,30 0,05 min seating plane 0,10 0,95 m 0,25 0 8 2 notes: a. all linear dimensions are in millimeters. b. this drawing is subject to change without notice. c. body dimensions include mold flash or protrusion.
important notice texas instruments and its subsidiaries (ti) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. all products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. ti warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with ti's standard warranty. testing and other quality control techniques are utilized to the extent ti deems necessary to support this warranty. specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage (acritical applicationso). ti semiconductor products are not designed, authorized, or warranted to be suitable for use in life-support devices or systems or other critical applications. inclusion of ti products in such applications is understood to be fully at the customer's risk. in order to minimize risks associated with the customer's applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. ti assumes no liability for applications assistance or customer product design. ti does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of ti covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. ti's publication of information regarding any third party's products or services does not constitute ti's approval, warranty or endorsement thereof. copyright ? 1998, texas instruments incorporated

▲Up To Search▲

Price & Availability of TLV2221IDBV

	To Download TLV2221IDBV Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .